C2001 transistor datasheet pdf storage

Max unit collector cutoff current i cbo vcb 35 v, ie 0 0. I b 0,l 25mh 700 v v brebo emitterbase breakdown voltage i e 600ma. Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. Unit test conditions collector to base breakdown voltage vbrcbo 30 v ic100. Technical literature, 5071, product development, specification, datasheet, tip35c, tip36c. Maxunit v ceosus collectoremitter sustaining voltage i c 100ma. Bcb transistor npn 45v ma to fairchild semiconductor datasheet pdf data sheet free from datasheet data sheet search for. Thermal data rthjcase thermal resistance junctioncase 1. Npn siliconplasticencapsulatetransistorfeaturescapable of 0.

Mje180181182 npn epitaxial silicon transistor mouser electronics. Pmd npn silicon triple diffsued transistor designed for audio frequency power amplifier applications. Epc2001 enhancement mode power transistor vdss, 100 v rdson, 7 mw id, 25 a new product maximum ratings ds draintosource voltage up to 10,000 5ms pulses at 125 c 120 v draintosource voltage continuous 100 v i d continuous t a 25. C2001 datasheet, c2001 pdf, c2001 data sheet, datasheet, data sheet, pdf.

Ksa708 pnp epitaxial silicon transistor mouser electronics. Planar, transistor, sc2001, c2001, 2001, 2sc200, 2sc20, 2sc2, equivalent. C2001 transistor datasheet pdf 2scm transistor datasheet pdf, 2scm equivalent. Toshiba transistor silicon npn epitaxial type 2sc2878. This is being used in a flyback circuit, which switches at approx ummm khz or so.

Specifications may change in any manner without notice. The ic allows the realization of highpower output and highefficiency power management systems, which require few external components because of the builtin average current control system. Sep 18, 2019 c3150 datasheet pdf 800v, npn power transistor mospec, 2sc3150 datasheet, c3150 pdf, c3150 pinout, c3150 equivalent, data, circuit, c3150 schematic. Any changes of specification will not be informed individually. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. It is intended for power switching circuits, series. C3150 datasheet pdf 800v, npn power transistor mospec. If you cant search it here, nowhere else in the world.

Mcc tm micro commercial components 2sc2001 2sc2001m 2sc2001l 2sc2001k omponents 20736 marilla street chatsworth. Ib0 400 v vbrcbo collectorbase breakdown voltage ic1ma. Unit icbo collector cutoff current ie 0 for bdx33b34b vcb 80 v for bdx33c34c vcb 100v tcase 100 oc for bdx33b34b vcb 80 v for bdx33c34c. Junction, storage temperature tj, tstg 150, 55150 c electrical characteristics ta 25c unless otherwise specified parameter symbol min typ max unit test condition collector to base breakdown voltage vbrcbo 80 v ic0. C2073 datasheet vceo 150v, npn power transistor mospec.

Unit output cutoff current i ooff v o50v, v i0 500 na dc current gain g i v o5v, i o10ma 70 120 output voltage v oon i o10ma, i i0. It is intented for use in power linear and switching applications. Elektronische bauelemente npn plastic encapsulated transistor. Dtc143tm dtc143teb sc105aa sc89 emt3 umt3f lfeatures 1 builtin biasing resistor 2 builtin bias resistors enable the configuration of an inverter circuit without connecting external. Toshiba transistor silicon npn epitaxial type pct process. Bipolar power transistor selection guide january 2003 table of contents product page general purpose transistors horizontal deflection output transistors product page dpak d2pak sot223 ipak to126 todarlington transistors dpak ipak to126 to220 to220f to3p to3pf switching transistors dpak d2pak to92 to126 to220 to220f to3p to3pf 2. A leader position in electric actuation technology. Free packages are available maximum ratings rating symbol value unit collector. In certain cases, the quoted collector current may be exceeded. Semiconductor data sheets andor specifications can and do vary in different applications and actual. Npn silicon transistor, 2sc2001 datasheet, 2sc2001 circuit, 2sc2001 data sheet.

Jul 05, 2017 c2073 datasheet vceo 150v, npn power transistor mospec, 2sc2073 datasheet, c2073 pdf, c2073 pinout, c2073 data, c2073 crcuit, output, c2073 schematic. Fairchild and our authorized distributors will stand behind all warranties and will appropriately addr ess any warranty issues that may arise. Storage temperature range tstg 55125 c electrical characteristics ta 25c characteristics symbol test condition min typ. Ztx851 silicon planar medium power high current transistor datasheet keywords zetex ztx851 silicon planar medium power high current transistor datasheet emergency lighting,vceo 60v 5 amps continuous current up to 20 amps peak current very low saturation voltages ptot1. As is common with most switching transistors, resistive. Bu1508dx datasheet pdf budx datasheet, budx circuit, budx data sheet. If you continue to use b datasheet site we will assume that you are happy with it. Ztx851 silicon planar medium power high current transistor. The safe level for these devices is specified as reverse bias safe operating area and represents the voltagecurrent conditions during reverse biased turnoff. Max unit collector cutoff current i cbo vcb 50 v, ie 0 0. Emitter sustaining voltage excellent dc current gain complement to mje340. Dc converter and motor drive applications,alldatasheet. Texas instruments transistor and diode databook 1st ed 1973 datasheets for diodes from 1n251 on and transistors from 2n117 on acrobat 7 pdf 34.

Datasheet search engine for electronic components and semiconductors. Nchannel enhancement mode irfz44n datasheet catalog. Pdf 2sc2001 2sc2001m 2sc2001l 2sc2001k 55oc c2001 transistor c2001 c2001 transistor c2001 c2001 npn 2sc2001 transistor 2sc2001. The device is designed for use in lighting applications and low cost switchmode power supplies. Storage proper storage until installed keep unit in a dry, temperature controlled area. The ssc2001s is a continuous conduction mode ccm control ic for power factor correction pfc.

Elektronische bauelemente npn plastic encapsulated. This is an nchannel enhancement mode silicon gate power. Apr 30, 2019 bcb transistor datasheet pdf, bcb equivalent. Fall time ic, collector current ma 20 30 50 70 100 10 5. Com is the biggest online electronic component datasheets search engine. St 2sc2001 npn silicon epitaxial planar transistor for switching and af. Storage temperature range t stg55 150 c electrical characteristics ta25c characteristic symbol test condition min. I absolute maximum ratings parameter symbol ratings unit collectoremitter voltage vceo 400 v collectorbase voltage vcbo 600 v emitter base voltage vebo 7 v collector current ic 200 ma collector power dissipation. M absolute maximum ratings ta25 c, unless otherwise specified parameter symbol ratings unit collectorbase voltage vcbo60 v collectoremitter voltage vceo50 v collectoremitter voltage vebo5 v dc ib1 a base current pulse ibp2 a. Mcc 2sc2001m micro commercial components tm 20736 marilla street chatsworth micro commercial components 2sc2001l ca 911 phone. Pnp resistorequipped transistor see simplified outline, symbol and pinning for package details. Npn silicon plasticencapsulate transistor, c2001 pdf download micro commercial components, c2001 datasheet pdf, pinouts, data sheet, equivalent, schematic, cross reference, obsolete, circuits. Toshiba transistor silicon npn triple diffused type 2sc5200.

B datasheet, b pdf, b data sheet, b manual, b pdf, b, datenblatt, electronics b, alldatasheet, free, datasheet, datasheets, data sheet. However, at lower test currents this relationship may not be valid. Classification rating 94v0 ul flammability npn silicon plasticencapsulate transistor marking. Apr 26, 2019 c2001 transistor datasheet pdf the remedies herein are not exclusive, but rather are cumulative and in addition to all other remedies available to on semiconductor.

Technical literature, 4080, product development, specification, datasheet, 2n3439, 2n3440 created date. Max unit vceosus collectoremitter sustaining voltage i c0. Toshiba power transistor semiconductor data book 1983 toshiba corporation 1983 acrobat 7 pdf 52. C2001 datasheet, c2001 pdf, c2001 data sheet, c2001 manual, c2001 pdf, c2001, datenblatt, electronics c2001, alldatasheet, free, datasheet, datasheets, data sheet. Electrical specifications ta 25c unless otherwise noted. Storage temperature range tstg 55150 c electrical characteristics ta 25c characteristics symbol test condition min typ. Preliminary first production this datasheet contains preliminary data. Toshiba transistor silicon npn epitaxial type pct process 2sc2240 low noise audio amplifier applications the 2sc2240 is a transistor for low frequency and low noise applications. High voltage fastswitching npn power transistor stmicroelectronics. A, ie0 collector to emitter breakdown voltage vbrceo 25 v ic10ma, ib0. Plastic mediumpower pnp silicon transistor this device is designed for use in line.

Npn 100ma 50v digital transistors bias resistor builtin transistors datasheet loutline parameter value vmt3 emt3f vceo 50v ic 100ma r1 4. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. Junction, storage temperature tj, tstg 150, 55150 c electrical characteristics ta 25c unless otherwise specified parameter symbol min. Nothing contained in this agreement limits a party from filing a truthful complaint, or the partys ability to communicate directly to, or otherwise participate in either. Vce limits of the transistor that must be observed for reliable operation. Toshiba power transistor semiconductor data book 1983.

Jul 12, 2019 br datasheetpdf hisincerity mocroelectronics this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. C, tpulse 300 s 100 v gs gatetosource voltage 6 v gateto. Savantic semiconductor product specification 2 silicon npn power transistors 2sc4242 characteristics tj25 unless otherwise specified symbol parameter conditions min typ. D438, ksc1008c, ksc1009c marked c2001 instead of 2sc2001 price is per one transistor. Npn power transistors features npn transistors applications audio, linear and switching applications description the devices are manufactured in planar technology with base island layout. Com datasheet search site for electronic components and semiconductors and other semiconductors. I absolute maximum ratings parameter symbol ratings unit collectoremitter voltage vceo 400 v collectorbase voltage vcbo 600 v emitter base voltage vebo 7 v collector current ic 200 ma collector power dissipation sot89 pc 550 mw to92 750. Max unit collector cutoff current i cbo vcb 230 v, ie 0. Power factor correction continuous conduction mode controller. I have shortterm access to c201 c putting that in the circuit works just fine, so i know the transistor is the issue. C2001 350mw, pnp small signal transistor features low power loss, high efficiency ideal for automated placement high surge current capability moisture sensitivity level.